P-TO-263-3-2(2005) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

P-TO-263-3-2
(Rev.:2005)

High Speed IGBT in NPT-technology

Infineon Technologies 

SGB15N60HS

^

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=15A,

VGE=0/15V,

RG=23Ω

Lσ1) =60nH,

Cσ1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

13

14

209

15

0.32

0.21

0.53

Unit

max.

ns

mJ

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=400V,IC=15A,

VGE=0/15V,

RG= 3.6Ω

Lσ1) =60nH,

Cσ1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=150°C

VCC=400V,IC=15A,

VGE=0/15V,

RG= 23Ω

Lσ1) =60nH,

Cσ1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

11

6

72

26

0.38

0.20

0.58

12

15

235

17

0.48

0.30

0.78

Unit

max.

ns

mJ

ns

mJ

1) Leakage inductance Lσ an d Stray capacity C σ due to test circuit in Figure E.

Power Semiconductors

3

Rev 2.1 Jan 05

Share Link: