^
Figure A. Definition of switching times
SGB15N60HS
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t)
r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Published by
Power Semiconductors
10
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
a nd Stray capacity Cσ =40pF.
Rev 2.1 Jan 05