TIP116 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
TIP116 Datasheet PDF : 4 Pages
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TIP115/116/117
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP110/111/112
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: TIP115
: TIP116
: TIP117
- 60
V
- 80
V
- 100
V
VCEO
Collector-Emitter Voltage : TIP115
: TIP116
: TIP117
- 60
V
- 80
V
- 100
V
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
-5
V
-2
A
-4
A
- 50
mA
2
W
50
W
150
°C
- 65 ~ 150
°C
1
TO-220
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
R1
R1 ≅ 10kΩ
R2 ≅ 0.6kΩ
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP115
: TIP116
: TIP117
IC = -30mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Cob
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0
VBE = -5V, IC = 0
VCE = -4V,IC = -1A
VCE = -4V, IC = -2A
IC = -2A, IB = -8mA
VCE = -4V, IC = -2A
VCB = -10V, IE = 0, f = 0.1MHz
Min. Max. Units
-60
V
-80
V
-100
V
-2 mA
-2 mA
-2 mA
-1 mA
-1 mA
-1 mA
-2 mA
1000
500
-2.5
V
-2.8
V
200 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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