TIP116 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
TIP116 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
PNP TIP115-116-117
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-case From junction-case
RthJ-amb From junction-ambient
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Value
2.5
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
TIP110
ICBO
Collector Cutoff Current IE= 0,VCB = -VCBOmax TIP111 -
-
TIP112
ICEO
Collector Cutoff Current
IE= 0,
VCE = -1/2 VCEOmax
TIP110
TIP111
TIP112
-
-
TIP110
IEBO
Emitter Cutoff Current VEB= -5 V, IC= 0
TIP111 -
-
TIP112
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= -30 mA, IB= 0
TIP110 -60 -
TIP111 -80 -
TIP112 -100 -
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= -2 A, IB= -8 mA
TIP110
TIP111 -
TIP112
-
VBE(on)
Base-Emitter Voltage
(*)
IC= -2 A, VCE= -4 V
TIP110
TIP111 -
TIP112
-
TIP110
VCE= -4 V, IC= -1 A
TIP111 1000 -
hFE
DC Current Gain (*)
TIP112
TIP110
VCE= -4 V, IC= -2 A
TIP111 500 -
TIP112
COB
Output Capacitance
IE= 0, VCB = -10 V
f= 0.1MHz
TIP110
TIP111 -
-
TIP112
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
-1 mA
-2 mA
-2 mA
-
-
V
-
-2.5 V
-2.8 V
-
-
-
200 pF
05/10/2012
COMSET SEMICONDUCTORS
2|3
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