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TIP115G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
TIP115G Datasheet PDF : 0 Pages
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
- 30 V
D1, MUST BE FAST RECOVERY TYPE, eg:
 1N5825 USED ABOVE IB 100 mA
 MSD6100 USED BELOW IB 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ 8.0 V
0
51
D1
8.0 k 60
V1
approx
-12 V
25 ms
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
Figure 3. Switching Times Test Circuit
4.0
ts
VCC = 30 V IB1 = IB2
IC/IB = 250 TJ = 25°C
2.0
1.0
tf
0.8
0.6
tr
0.4
0.2
0.04 0.06
td @ VBE(off) = 0
PNP
NPN
0.1
0.2
0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. Switching Times
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 5. Thermal Response
50 100 200
500 1.0 k
www.onsemi.com
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