IRFP250 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
IRFP250 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250
FEATURES
·Drain Current –ID= 33A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.085Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±20
V
ID
Drain Current-Continuous
33
A
IDM
Drain Current-Single Pluse
130
A
PD
Total Dissipation @TC=25℃
180
W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.7
℃/W
Rth j-a Thermal Resistance, Junction to Ambient
30
℃/W
isc website：www.iscsemi.cn
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