IRFP250A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
IRFP250A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 16A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
VSD
Forward On-Voltage
IS= 32A; VGS= 0
·
MIN MAX UNIT
200
V
2
4
V
0.085
Ω
±100
nA
250
μA
2.0
V
isc website：www.iscsemi.cn
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