2SC4027T View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC4027T

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC4027

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 0.5A; IB= 50mA

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10uA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10uA; IC= 0

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE-1

DC Current Gain

IC= 0.1A; VCE= 5V

hFE-2

DC Current Gain

IC= 10mA; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V

MIN TYP. MAX UNIT

0.45 V

1.2

V

180

V

6

V

1.0 μA

1.0 μA

100

400

80

12

pF

120

MHz

 hFE-1 Classifications

R

S

T

100-200 140-280 200-400

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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