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FQD2N60CTF View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQD2N60CTF
Fairchild
Fairchild Semiconductor Fairchild
FQD2N60CTF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1.
2.
IVDG=S =2500Vµ
A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Operation in This Area
101
is Limited by R DS(on)
100 µs
1 ms
100
10 ms
DC100 ms
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e5P0uolCse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
IVDG=S =0.1905
V
A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
D = 0 .5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
s in gle p ulse
※ N otes :
1.
2.
3.
ZD θu JtCy(
TJM -
t) = 2.87 ℃ /W M
Fa
TC
ct
=
or,
PD
MD*=Zt1θ/t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q ua re W ave P u lse D uration [sec]
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
4
www.fairchildsemi.com
 

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