SMD Type
Transistors
NPN Transistors
2SD1803
TEST CIRCUIT
IB1
INPUT
RB
OUTPUT
IB2
RL
50
VR
PW=20μS
Duty Cycle≦1%
Ic=10IB1=-10IB2=2A
+
100μ
-5V
+
470μ
25V
(Unit : (resistance : Ω, capacitance : F))
■ Typical Characterisitics
Ic -VCE
5
25mA
30mA
4
35mA
40mA
50mA 45mA
3
20mA
15mA
2
10mA
5mA
1
0
IB=0
0
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage, VCE (V)
Ic -VBE
6
VCE=2V
5
4
3
Ta=75 C
2
Ta=25 C
1
Ta=-25 C
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Base to Emitter Voltage, VBE (V)
Ic -VCE
5
30mA
4
25mA
20mA
3
15mA
2
10mA
5mA
1
0
IB=0
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
1000
7
5
3
2
100
7
5
3
2
hFE -I c
Ta=75 C
C
VCE=2V
Ta=25 C
Ta=-25 C
10
5 7 0.01 2 3 5 7 0.1 2 3 5 71.0 2 3 5 7 10
Collector Current, IC (A)
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