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STP6NA60FP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP6NA60FP Datasheet PDF : 0 Pages
STP6NA60FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
Qg
Qgs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V
ID = 3 A
RG = 47
VGS = 10 V
VDD = 480 V ID = 3 A VGS = 10 V
Min.
Typ .
35
90
54
8
23
Max.
55
125
75
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 6 A
RG = 47 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
80
20
115
Max.
110
30
155
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 6.5 A VGS = 0
trr
Reverse
Time
Qrr
Reverse
Recovery ISD = 6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
Recovery (see circuit, figure 5)
Charge
IRRM Reverse
Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
Max.
6.5
26
Unit
A
A
1.6
V
600
ns
9
µC
30
A
3/5
 

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