STP5NA80FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP5NA80FP

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STP5NA80FP

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

S T P 5N A 80 F P

VDSS

800 V

RDS(on)

< 2.4 Ω

ID

2.8 A

s TYPICAL RDS(on) = 1.8 Ω

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

s REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS

represents the most advanced high voltage

technology. The optmized cell layout

coupled with a new proprietary edge

termination concur to give the device low

RDS(on) and gate charge, unequalled

ruggedness and superior switching

performance.

PRELIMINARY DATA

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VD GR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation W it hst and Volt age (DC)

Tstg St orage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

October 1997

Valu e

800

800

± 30

2.8

1.8

19

40

0.32

2000

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

V

oC

oC

1/5

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