U630H16BDC25 View Datasheet(PDF) - Zentrum Mikroelektronik Dresden AG
Part Name
Description
Manufacturer
U630H16BDC25 Datasheet PDF : 14 Pages
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U630H16
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
IOH
IOL
VCC
VOH
VOL
VCC
VIH
VIL
VCC
VOH
VOL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
C-Type
K-Type
Unit
Min. Max. Min. Max.
2.4
2.4
V
0.4
0.4 V
-4
-4 mA
8
8
mA
1
1 µA
-1
-1
µA
1
1 µA
-1
-1
µA
SRAM MEMORY OPERATIONS
No.
Switching Characteristics
Read Cycle
Symbol
Alt. IEC
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
1 Read Cycle Timef
tAVAV
tcR
25
35
45
ns
2 Address Access Time to Data Validg
tAVQV ta(A)
25
35
45 ns
3 Chip Enable Access Time to Data Valid tELQV ta(E)
25
35
45 ns
4 Output Enable Access Time to Data Valid tGLQV ta(G)
12
20
25 ns
5 E HIGH to Output in High-Zh
tEHQZ tdis(E)
13
17
20 ns
6 G HIGH to Output in High-Zh
tGHQZ tdis(G)
13
17
20 ns
7 E LOW to Output in Low-Z
tELQX ten(E)
5
5
5
ns
8 G LOW to Output in Low-Z
tGLQX ten(G)
0
0
0
ns
9 Output Hold Time after Addr. Changeg
tAXQX tv(A)
3
3
3
ns
10 Chip Enable to Power Activee
tELICCH tPU
0
0
0
ns
11 Chip Disable to Power Standbyd, e
tEHICCL tPD
25
35
45 ns
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
4
December 12, 1997
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