U630H16BD1K45 View Datasheet(PDF) - Zentrum Mikroelektronik Dresden AG
Part Name
Description
Manufacturer
U630H16BD1K45 Datasheet PDF : 14 Pages
| |||
U630H16
Block Diagram
A5
A6
A7
A8
A9
EEPROM
Array
STORE
VCC
SRAM
RECALL
VSS
Array
32 Rows x
64 x 8 Columns
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Truth Table for SRAM Operations
Column I/O
Column Decoder
A0 A1 A2 A3 A4 A10
Store/
Recall
Control
VCC
G
NE
E
W
Operating Mode
E
NE
W
G
DQ0 - DQ7
Standby/not selected
H
Internal Read
L
Read
L
Write
L
* H or L
*
*
*
H
H
H
High-Z
High-Z
H
H
L
Data Outputs Low-Z
H
L
*
Data Inputs High-Z
Characteristics
All voltages are referenced to VSS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of VI, as well as
input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the tdis-times and ten-times, in which cases transition is measured ± 200 mV from steady-state voltage.
Absolute Maximum Ratingsa
Symbol
Min.
Max.
Unit
Power Supply Voltage
VCC
-0.5
7
V
Input Voltage
VI
-0.3
VCC+0.5
V
Output Voltage
VO
-0.3
VCC+0.5
V
Power Dissipation
PD
1
W
Operating Temperature
C-Type
K-Type
Ta
0
-40
70
°C
85
°C
Storage Temperature
Tstg
-65
150
°C
a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
December 12, 1997
|
|
Share Link: 