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D1062 Ver la hoja de datos (PDF) - ON Semiconductor

Número de piezacomponentes DescripciónFabricante
D1062 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 12A Switching Applications ON-Semiconductor
ON Semiconductor ON-Semiconductor
D1062 Datasheet PDF : 4 Pages
1 2 3 4
2SB826 / 2SD1062
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
hFE1
hFE2
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=(--)2V, IC=(--)1A
VCE=(--)2V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
IC=(--)6A, IB=(--)0.3A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=
IE=(--)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
* : The 2SB826 / 2SD1062 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140 100 to 200 140 to 280
min
70*
30
Ratings
typ
10
(--)60
(--)50
(--)6
(0.2)0.1
(0.4)1.2
(0.1)0.05
max
280*
(--0.5)0.4
Unit
MHz
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7507-001
10.2
5.1 3.6
4.5
1.3
1.2
0.8
123
2.55
2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
Switching Time Test Circuit
IB1
PW=20µs
tr, tf 15ns
IB2
OUTPUT
INPUT
VR
100
50
RB
1
+
1µF
RL
4Ω
+
F
VBE= --5V
VCC=20V
IC=10IB1= --10IB2=5A
For PNP, the polarity is reversed.
IC -- VCE
--16
--14
--12
--1A
--800mA
--600mA--400mA
2SB826
--10
--200mA
--8
--6
--100mA
--80mA
--60mA
--4
--40mA
--2
--20mA
0
IB=0mA
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Collector-to-Emitter Voltage, VCE -- V ITR08461
IC -- VCE
16
400mA
2SD1062
14
12
200mA
10
8
100mA
80mA
6
60mA
40mA
4
20mA
2
0
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-to-Emitter Voltage, VCE -- V ITR08462
Rev.0 I Page 2 of 4 I www.onsemi.com
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