AP20GT60ASP-HF View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
Manufacturer
AP20GT60ASP-HF Datasheet PDF : 3 Pages
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100
80
60
40
20
0
0
25
50
75
100
125
150
Junction Temperature ( o C )
Fig7. Power Dissipation vs. Junction
Temperature
20
T C =25 o C
15
10
5
I C = 60 A
40 A
20 A
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
16
I C =20A
V CC =480V
12
8
4
0
0
20
40
60
80
100
120
Q G , Gate Charge (nC)
Fig 11. Gate Charge Characterisitics
AP20GT60ASP-HF
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance
20
T C = 150 o C
15
10
5
I C = 60 A
40 A
20 A
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
1000
100
10us
10
100us
1
1ms
0.1
T C =25 o C
Single Pulse
0.01
1
10
100
10ms
1000
10000
V CE ,Collector - Emitter Voltage(V)
Fig 12. SOA Characteristics
3
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