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AP30G100W View Datasheet(PDF) - Advanced Power Electronics Corp

Part Name
Description
Manufacturer
AP30G100W
A-POWER
Advanced Power Electronics Corp A-POWER
AP30G100W Datasheet PDF : 4 Pages
1 2 3 4
1000
V GE =15V
T C =125 o C
100
10
Safe Operating Area
1
1
10
100
1000
10000
V CE , Collector-Emitter Voltage(V)
Fig 7. Turn-off SOA
20
T C =25 o C
15
10
I C = 60 A
30 A
15 A
5
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
250
200
150
100
50
0
0
50
100
150
200
Junction Temperature ( )
Fig11. Power Dissipation vs. Junction
Temperature
AP30G100W
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance
20
TC=150oC
15
I C = 60 A
30 A
15 A
10
5
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
20
I C = 3 0A
V CC =200V
16 V CC =300V
V CC =500V
12
8
4
0
0
20
40
60
80
Q G , Gate Charge (nC)
Fig 12. Gate Charge Characterisitics
3/3
 

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