DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

ACE1557B View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name
Description
Manufacturer
ACE1557B
ACE
ACE Technology Co., LTD. ACE
ACE1557B Datasheet PDF : 5 Pages
1 2 3 4 5
ACE1557B
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25, unless otherwise specified.
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VSD
IS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
td(on)
Tr
td(off)
Tf
Input Capacitance
Output Capacitance
REVERSE Transfer
Capacitance
Gate resistance
Ciss
Coss
Crss
Rg
Conditions
Static
VGS=0V, ID=250 uA
VDS=VGS, IDS=250uA
VDS=0V,VGS=±20V
VDS=24V, VGS=0V
VGS=10V, ID=4A
VGS=4.5V, ID=3A
VDS=5V,ID=5A
ISD=1A, VGS=0V
Switching
VDS=15V, VGS=10V, ID=5A
VGS=10V, RG=6Ω, VDS=15V,
RL=15Ω, ID=1A
Dynamic
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Min. Typ. Max. Unit
30 34
V
1 1.4 2
100 nA
1 uA
29 32
mΩ
41 51
15
S
0.77 1.0 V
4.3 A
7.6 9.9
1.3 1.7 nC
1.7 2.2
10.1 20.3
3.2 6.3
nS
22.2 44.4
36
391
86.2
pF
59.4
1.4 2 Ω
VER 1.2 2
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]