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Part Name
Description
ACE1557B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
Manufacturer
ACE1557B
N-Channel Enhancement Mode Field Effect Transistor
ACE Technology Co., LTD.
ACE1557B Datasheet PDF : 5 Pages
1
2
3
4
5
ACE1557B
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
T
A
=25
℃
, unless otherwise specified.
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
gfs
V
SD
I
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q
g
Q
gs
Q
gd
td(on)
Tr
td(off)
Tf
Input Capacitance
Output Capacitance
REVERSE Transfer
Capacitance
Gate resistance
Ciss
Coss
Crss
Rg
Conditions
Static
V
GS
=0V, I
D
=250 uA
V
DS
=V
GS
, I
DS
=250uA
V
DS
=0V,V
GS
=±20V
V
DS
=24V, V
GS
=0V
V
GS
=10V, I
D
=4A
V
GS
=4.5V, I
D
=3A
V
DS
=5V,I
D
=5A
I
SD
=1A, V
GS
=0V
Switching
V
DS
=15V, V
GS
=10V, I
D
=5A
V
GS
=10V, R
G
=6
Ω
, V
DS
=15V,
R
L
=15
Ω
, I
D
=1A
Dynamic
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Min. Typ. Max. Unit
30 34
V
1 1.4 2
100 nA
1 uA
29 32
m
Ω
41 51
15
S
0.77 1.0 V
4.3 A
7.6 9.9
1.3 1.7 nC
1.7 2.2
10.1 20.3
3.2 6.3
nS
22.2 44.4
36
391
86.2
pF
59.4
1.4 2
Ω
VER 1.2 2
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