ACE1550B View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name

Description

Manufacturer

ACE1550B

P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE1550B

P-Channel Enhancement Mode Field Effect Transistor

Description

The ACE1550B combines advanced trench MOSFET technology with a low resistance package to

provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,

Pagers.

Features

 VDS(V) =-20V

 ID=-0.7A

 RDS(ON)<620mΩ (VGS=-4.5V)

 RDS(ON)<860mΩ (VGS=-2.5V)

 RDS(ON)<1450mΩ (VGS=-1.8V)

Absolute Maximum Ratings

Parameter

Symbol Max Unit

Drain-Source Voltage

VDSS -20 V

Gate-Source Voltage

Continuous Drain Current * AC

TA=25℃

TA=70℃

VGSS ±12 V

-0.7

ID

A

-0.56

Pulsed Drain Current * B

IDM

-1 A

Power Dissipation

TA=25℃

TA=70℃

0.27

PD

W

0.16

Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC

Packaging Type

SOT-523

VER 1.2 1

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