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ACE1500BCM-H View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name
Description
Manufacturer
ACE1500BCM-H
ACE
ACE Technology Co., LTD. ACE
ACE1500BCM-H Datasheet PDF : 0 Pages
ACE1500B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1500B XX + H
Halogen - free
Pb - free
CM : SOT-323
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
V(BR)DSS
IDSS
IGSS
RDS(ON)
VGS(th)
gFS
VGS=0V, ID=-250uA
VDS=-20V, VGS=0V
VGS=±12V, VDS=0V
VGS=-4.5V, ID=-1A
VGS=-2.5V, ID=-0.5A
VGS=-1.8V, ID=-0.3A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2A
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous
Current
IS
ISD=-1.6A, VGS=0V
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
td(off)
tf
VDS=-6V, ID=-2.8A
VGS=-4.5V
VDS=-6V,RGEN=6Ω,
VGS=-4.5V
RL=6Ω
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=-6V, VGS=0V
f=1MHz
Notes:
1. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
2. Guaranteed by design, not subject to production testing.
Min.
-20
-0.4
Typ.
145
150
180
-0.7
5
-0.93
4.9
0.62
1.07
10.1
4.76
84.1
25.2
472
71
51
Max. Unit
V
-1 uA
100 nA
155
168 mΩ
220
-1
V
S
-1.1 V
-1.6 A
nC
ns
pF
VER 1.2 2
 

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