ACE1551B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
Manufacturer
ACE1551B Datasheet PDF : 7 Pages
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ACE1551B
N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1551B XX + H
Halogen - free
Pb - free
JM : SOT-723
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-Resistance RDS(ON)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
REVERSE Transfer
Capacitance
Ciss
Coss
Crss
Conditions
Static
VGS=0V, ID=250 uA
VDS=VGS, IDS=250uA
VDS=0V,VGS=±12V
VDS=20V, VGS=0V
VGS=4.5V, ID=0.8A
VGS=2.5V, ID=0.7A
VGS=1.8V, ID=0.6A
VDS=10V,ID=0.4A
ISD=0.15A, VGS=0V
Switching
VDS=10V, VGS=4.5V, ID=0.6A
VGS=4.5V, ID=0.5A, VDS=10V,
RG=1Ω
Dynamic
VGS=0V, VDS=10V, f=1MHz
Min. Typ. Max. Unit
20
V
0.4
1.0
±100 nA
1 uA
300 360
340 420 mΩ
420 560
1
S
0.65 1.2 V
1.06 1.38
0.18
nC
0.32
18 26
20 28
nS
70 110
25 40
70
20
pF
8
VER 1.2 2
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