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MTV6N100E View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MTV6N100E Datasheet PDF : 0 Pages
MTV6N100E
Designer’sData Sheet
TMOS E−FET.
Power Field Effect
Transistor
D3PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
The D3PAK package has the capability of housing the largest chip
size of any standard, plastic, surface mount power semiconductor. This
allows it to be used in applications that require surface mount
components with higher power and lower RDS(on) capabilities. This
high voltage MOSFET uses an advanced termination scheme to provide
enhanced voltageblocking capability without degrading performance
over time. In addition, this advanced TMOS EFET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a draintosource diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in surface mount PWM motor controls and both acdc and
dcdc power supplies. These devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specifically Designed Leadframe for Maximum Power Dissipation
Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix
to Part Number
http://onsemi.com
TMOS POWER FET
6.0 AMPERES, 1000 VOLTS
RDS(on) = 1.5 W
D3PAK Surface Mount
CASE 43301
Style 2
D
®
G
S
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 Rev. 1
Publication Order Number:
MTV6N100E/D
 

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