DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

MTV6N100ED View Datasheet(PDF) - Motorola => Freescale

Part Name
Description
Manufacturer
MTV6N100ED Datasheet PDF : 0 Pages
MTV6N100E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
10 TC = 25°C
10 µs
1.0
100 µs
0.1
0.01
0.1
1 ms
RDS(on) LIMIT
THERMAL LIMIT
10 ms
dc
PACKAGE LIMIT
1.0
10
100
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
800
ID = 6 A
700
600
500
400
300
200
100
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1
0.01
1.0E–05
0.05
0.02
0.01
SINGLE PULSE
1.0E–04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
Figure 14. Thermal Response
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 15. Diode Reverse Recovery Waveform
6
Motorola TMOS Power MOSFET Transistor Device Data
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]