MTV6N100ED View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
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TYPICAL ELECTRICAL CHARACTERISTICS
MTV6N100E
12
TJ = 25°C
10
8
VGS = 10 V
6V
5V
12
VDS ≥ 10 V
10
8
100°C
6
6
25°C
4
4
2
4V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2
TJ = –55°C
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.9
VGS = 10 V
2.5
TJ = 100°C
2.1
1.7
25°C
1.3
0.9
– 55°C
0.5
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1.56
TJ = 25°C
1.52
1.48
1.44
1.40
1.36
VGS = 10 V
1.32
15 V
1.28
1.24
0
1 2 3 4 5 6 7 8 9 10 11 12
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.8
VGS = 10 V
2.4
ID = 3 A
2.0
1.6
1.2
0.8
0.4
–50 –25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100000
10000
VGS = 0 V
1000
TJ = 125°C
100°C
100
25°C
10
1
0 100 200 300 400 500 600 700 800 900 1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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