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PZTA44 View Datasheet(PDF) - Weitron Technology

Part Name
Description
Manufacturer
PZTA44
Weitron
Weitron Technology Weitron
PZTA44 Datasheet PDF : 3 Pages
1 2 3
PZTA44
NPN Silicon Planar Epitaxial Transistor
BASE
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
COLLECTOR
2, 4
3
EMITTER
1. BASE
4
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
Value
Unit
400
V
500
V
6
V
300
mA
2
W
150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC =1mA)
Collector-Base Breakdown Voltage
(IC =100µA)
Emitter-Base Breakdown Voltage
(IE=10 µA)
Collector-Emitter Cutoff Current
(VCB =400V)
Collector Cutoff Current
(VCB=400V)
Emitter-Base Cutoff Current
(VEB=4V)
DC Current Gain
(VCE = 10V, I C = 1mA)
(VCE = 10V, I C = 10mA)
(VCE = 10V, I C = 50mA)
(VCE = 10V, I C = 100mA)
Collector-Emitter Saturation Voltages
(IC = 20mA, I B = 2mA)
(IC = 50mA, I B = 5mA)
Base-Emitter Saturation Voltages
(IC = 10mA, I B = 1mA)
Output Capacitance
(VCE = 20 Vdc, f = 1MHz)
Device Marking
PZTA44=44
Symbol Min
V(BR)CEO
400
Typ
-
V(BR)CBO
500
-
V(BR)EBO
6
-
ICBO
-
-
ICES
-
-
IEBO
-
-
Max Unit
-
V
-
V
-
V
100
nA
500
nA
100
nA
hFE1
40
hFE2
50
hFE3
45
hFE4
40
VCE(sat)
-
-
VBE(sat)
-
Cob
-
-
-
-
300
-
-
-
-
-
-
375
mV
-
750
-
750
mV
4
6
pF
WEITRON
1/3
http://www.weitron.com.tw
02-Jun-05
 

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