PZTA44 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
Manufacturer
PZTA44 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PZTA44
SOT-223
Formed SMD Package
High Voltage Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current Peak
Base Current Peak
Power Dissipation upto Tamb=25ºC
Storage Temperature
Junction Temperature
Operating Ambient Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
*PD
Tstg
Tj
Tamb
VALUE
500
400
6.0
300
300
100
1.35
- 65 to +150
150
- 65 to +150
UNITS
V
V
V
mA
mA
mA
W
ºC
ºC
ºC
THERMAL RESISTANCE
From junction to ambient
*Rth (j-a)
91
From junction to soldering point
Rth (j-s)
10
K/W
K/W
* Device Mounted on a printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
ABSOLUTE MAXIMUM RATINGS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN TYP MAX UNITS
Collector Cut Off Current
ICBO
VCB=400V, IE=0
100 nA
VCB=400V, IE=0, Tj=150ºC
10
µA
Emitter Cut Off Current
IEBO
VEB=4V, IC=0
100 nA
DC Current Gain
hFE
IC=1mA, VCE=10V
40
IC=10mA, VCE=10V
50
200
*IC=50mA, VCE=10V
45
*IC=100mA, VCE=10V
40
Collector Emitter Saturation Voltage
VCE (sat)
IC=1mA, IB=0.1mA
0.40 V
IC=10mA, IB=1mA
0.50 V
*IC=50mA, IB=5mA
0.75 V
Base Emitter Saturation Voltage
VBE (sat)
*IC=10mA, IB=1mA
0.85 V
Collector Capacitance
Cc
VCB=20V, f=1MHz
7.0 pF
Emitter Capacitance
Ce
VEB=0.5V, f=1MHz
180 pF
Transition Frequency
fT
IC=10mA, VCE=10V,f=100MHz 20
MHz
Pulse test tp <300 µs; δ < 0.02
PZTA44Rev140606E
Continental Device India Limited
Data Sheet
Page 1 of 4
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