Thermal Characteristics
Characteristics
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
Thermal resistance of junction to case
(4 devices operation, Tc = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Symbol
ΣRth (j-a)
ΣRth (j-c)
TL
Max
Unit
25
°C/W
5.0
°C/W
260
°C
MP4513
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 100 V, IE = 0 A
VCE = 100 V, IB = 0 A
VEB = 5 V, IC = 0 A
IC = 1 mA, IE = 0 A
IC = 30 mA, IB = 0 A
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
IC = 3 A, IB = 12 mA
IC = 3 A, IB = 12 mA
VCE = 3 V, IC = 0.5 A
VCB = 10 V, IE = 0 A, f = 1 MHz
Min Typ. Max Unit
―
―
―
―
0.3
―
100
―
100
―
1000 ―
1000 ―
―
―
―
―
―
10
―
40
10
µA
10
µA
2.0 mA
―
V
―
V
―
―
―
2.0
V
2.5
― MHz
―
pF
Turn-on time
Switching time Storage time
Fall time
ton
Input IB1
Output
―
0.5
―
tstg
20 µs
IB2
―
4.0
―
µs
VCC = 30 V
tf
―
2.5
―
IB1 = −IB2 = 12 mA, duty cycle ≤ 1%
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Forward current
Surge current
Forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
Test Condition
Min Typ. Max Unit
IFM
―
―
―
5
A
IFSM
t = 1 s, 1 shot
―
―
8
A
VF
IF = 1 A, IB = 0 A
―
1.1 1.8
V
trr
―
3.0
―
µs
IF = 5 A, VBE = −3 V, dIF/dt = −50 A/µs
Qrr
―
40
―
µC
2
2002-11-20