MP4513
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
MP4513
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Industrial Applications
Unit: mm
· Package with heat sink isolated to lead (SIP 12 pin)
· High collector power dissipation (4 devices operation)
: PT = 5 W (Ta = 25°C)
· High collector current: IC (DC) = 5 A (max)
· High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A)
· Diode included for absorbing fly-back voltage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Continuous base current
Collector power dissipation
(1 device operation, Ta = 25°C)
Collector power
dissipation
(4 devices operation)
Ta = 25°C
Tc = 25°C
Isolation voltage
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
VIsol
Tj
Tstg
Rating
Unit
100
V
100
V
5
V
5
A
8
0.1
A
3.0
W
5.0
W
25
1000
V
150
°C
−55 to 150
°C
Array Configuration
2
3
4
9
10
11
JEDEC
―
JEITA
―
TOSHIBA
2-32B1A
Weight: 6.0 g (typ.)
1
5
8
12
6
7
R1 R2
R1 ≈ 5 kΩ R2 ≈ 150 Ω
1
2002-11-20