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Part Name
Description
8H01 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
8H01
Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type Multi-Chip Transistor
Toshiba
8H01 Datasheet PDF : 0 Pages
Nch-MOS
I
D
– V
DS
250
Common source
Ta
=
25°C
200
10 4 3 2.5
2.3 2.1
1.9
150
1.7
100
1.5
50
VGS
=
1.3 V
0
0
0.5
1.0
1.5
2.0
Drain
−
source voltage V
DS
(V)
TPCP8H01
R
DS (ON)
−
I
D
12
Common source
Ta
=
25°C
10
8
VGS
=
1.5 V
6
4
2.5
2
4
0
1
10
100
Drain current I
D
(mA)
1000
R
DS (ON)
– Ta
8
Common source
7
6
VGS
=
1.5 V, ID = 1 mA
5
4
2.5 V, 10 mA
3
2
1
4.0 V, 10 mA
0
−
25 0
25
50
75 100 125 150
Ambient temperature Ta (°C)
1000
Common source
VDS
=
3 V
Ta = 25°C
⎪
Y
fs
⎪ −
I
D
100
10
1
1
10
100
1000
Drain current I
D
(mA)
10000
toff
1000
tf
t
−
I
D
Common source
VDD
=
3 V
VGS
=
0
~
2.5V
Ta = 25°C
100
ton
tr
10
0.1
1
10
100
Drain current I
D
(mA)
Capacitance
−
V
DS
100
Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
10
Ciss
Coss
Crss
1
0.1
1
10
100
Drain
−
source voltage V
DS
(V)
6
2006-11-13
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