BCP51 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
Manufacturer
BCP51 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BCP51 BCP52 BCP53
SOT-223
Formed SMD Package
General Purpose Medium Power DC Applications
Complementary BCP54 BCP55 and BCP56
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BCP51 BCP52
Collector Base Voltage
VCBO
45
60
Collector Emitter Voltage
VCEO
45
60
Emitter Base Voltage
VEBO
5.0
Collector Current (DC)
IC
1.0
Collector Current Peak
ICM
1.5
Base Current Peak
IBM
0.2
Power Dissipation upto Tamb=25ºC
*PD
1.3
Storage Temperature
Tstg
- 65 to +150
Junction Temperature
Tj
150
Operating Ambient Temperature
Tamb
- 65 to +150
BCP53
100
80
UNITS
V
V
V
A
A
A
W
ºC
ºC
ºC
THERMAL RESISTANCE
From junction to ambient
*Rth (j-a)
95
From junction to soldering point
Rth (j-a)
14
K/W
K/W
* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
ABSOLUTE MAXIMUM RATINGS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tj=125ºC
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
DC Current Gain
DC Current Gain
hFE
IC=5mA, VCE=2V
IC=150mA, VCE=2V
IC=500mA, VCE=2V
hFE
IC=150mA, VCE=2V
Group -10
Group -16
Collector Emitter Saturation Voltage
VCE (sat)
IC=0.5A, IB=50mA
Base Emitter On Voltage
VBE (on)
IC=0.5A, VCE=2V
Transition Frequency
fT
IC=10mA, VCE=5V,f=100MHz
MIN TYP MAX UNITS
100 nA
10
µA
100 nA
63
63
250
40
63
160
100
250
0.5
1.0
115
V
V
MHz
BCP51_53Rev011104E
Continental Device India Limited
Data Sheet
Page 1 of 4
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