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MJ2501 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
Manufacturer
MJ2501 Datasheet PDF : 2 Pages
1 2
^Se-mi-dondudtoi Lpioaucki, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCB
VEB
"c
IB
PD
TJ. Tstg
Symbol
9JC
MJ2500 MJ2501
MJ3000 MJ3001 Unit
60
80
Vdc
60
80
Vdc
5.0
Vdc
10
Adc
0.2
Adc
150
0.857
-55 to + 200
Watts
W/°C
°C
Max
Unit
1.17
°c/w
PNP
MJ2500
MJ2501*
NPN
MJ3000
MJ3001*
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60-80 VOLTS
150 WATTS
(TO-3)
PNP
MJ2500
COLLECTOR
9
-n
1
II
1
.-
****
K-"
! ~~^ Hi | = 2.0 k =50
-> i j "-^VW-A-^VW-H
j jC
EM TTER
NPN
MJ3000
MJ3001
COLL ECTOR
C)
|-
*~ ~l
t r J I
,•^ Il
I
I
;; i ^•^
I
i-C i I
i I » 2.0k = 50
- i I L-AVW.,^/VV-i 1
j l_
<>
EMUFTER
Figure 1. Darlington Circuit Schematic
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
 

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