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BD159 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
BD159
Iscsemi
Inchange Semiconductor Iscsemi
BD159 Datasheet PDF : 0 Pages
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD159
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB=B 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB=B 5mA
ICBO
Collector Cutoff Current
VCB= 375V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 50m A; VCE= 10V
MIN MAX UNIT
350
V
375
V
5
V
1.0
V
0.1
mA
0.1
mA
30
240
isc Websitewww.iscsemi.cn
 

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