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M12L64164A-6TA View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name
Description
Manufacturer
M12L64164A-6TA
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT
M12L64164A-6TA Datasheet PDF : 44 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ESMT
M12L64164A
Operation temperature condition -25~ 85
makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
Function
A13~A12
RFU
A11~A10/AP
RFU
A9
RFU
A8 A7 A6 A5 A4 A3 A2 A1 A0
TM
CAS Latency
BT
Burst Length
Test Mode
CAS Latency
Burst Type
Burst Length
A8 A7
Type
A6 A5 A4 Latency A3 Type A2 A1 A0 BT = 0 BT = 1
0
0 Mode Register Set 0
0
0 Reserved 0 Sequential 0
0
0
1
1
0
1
Reserved
0
0
1 Reserved 1 Interleave 0
0
1
2
2
1
0
Reserved
0
1
0
2
0
1
0
4
4
1
1
Reserved
0
1
1
3
0
1
1
8
8
1
0
0 Reserved
1
0
0 Reserved Reserved
1
0
1 Reserved
1
0
1 Reserved Reserved
1
1
0 Reserved
1
1
0 Reserved Reserved
1
1
1 Reserved
1
1
1 Full Page Reserved
Full Page Length : 256
POWER UP SEQUENCE
1.Apply power and start clock, Attempt to maintain CKE = ”H”, DQM = ”H” and the other pin are NOP condition at the inputs.
2. Maintain stable power , stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 is regardless of the order.
The device is now ready for normal operation.
Note : 1. RFU(Reserved for future use) should stay “0” during MRS cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2004
Revision: 0.1
9/44
 

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