M12L64164A-6TA View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name

Description

Manufacturer

M12L64164A-6TA

1M x 16 Bit x 4 Banks Synchronous DRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

M12L64164A

Operation temperature condition -25℃ ~ 85℃

AC CHARACTERISTICS (AC operating condition unless otherwise noted)

PARAMATER

SYMBOL

CLK cycle time

CAS latency = 3

tCC

CAS latency = 2

CLK to valid

output delay

CAS latency = 3

tSAC

CAS latency = 2

Output data

hold time

CAS latency = 3

tOH

CAS latency = 2

CLK high pulsh width

tCH

CLK low pulsh width

tCL

Input setup time

tSS

Input hold time

tSH

CLK to output in Low-Z

tSLZ

CLK to output

in Hi-Z

CAS latency = 3

tSHZ

CAS latency = 2

-6

MIN

MAX

6

-

8

5.5

6

2.5

2.5

2.5

2.5

1.5

1

0

5.5

6

-7

MIN

7

10

2.5

2.5

2.5

2.5

1.5

1

0

MAX

-

6

6

6

6

Note :

1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.

3. Assumed input rise and fall time (tr & tf) =1ns.

If tr & tf is longer than 1ns. transient time compensation should be considered.

i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.

UNIT NOTE

ns

1

ns

1,2

ns

2

ns

3

ns

3

ns

3

ns

3

ns

2

ns

Elite Semiconductor Memory Technology Inc.

Publication Date: Dec. 2004

Revision: 0.1

6/44

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