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M12L64164A-6TA View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name
Description
Manufacturer
M12L64164A-6TA
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT
M12L64164A-6TA Datasheet PDF : 44 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ESMT
M12L64164A
Operation temperature condition -25~ 85
DC CHARACTERISTICS
Recommended operating condition unless otherwise notedTA = -25 to 85 °C
PARAMETER
SYMBOL
TEST CONDITION
Operating Current
(One Bank Active)
ICC1
Precharge Standby Current ICC2P
in power-down mode
ICC2PS
Precharge Standby Current
in non power-down mode
ICC2N
ICC2NS
Active Standby Current
in power-down mode
ICC3P
ICC3PS
Burst Length = 1, t RC t RC(min), IOL = 0 mA,
tcc = tcc(min)
CKE VIL(max), tcc = tcc(min)
CKE & CLK VIL(max), tcc =
CKE VIH(min), CS VIH(min), tcc = tcc(min)
Input signals are changed one time during 2CLK
CKE VIH(min), CLK VIL(max), tcc =
input signals are stable
CKE VIL(max), tcc = tcc(min)
CKE & CLK VIL(max), tcc =
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
ICC3N
ICC3NS
ICC4
ICC5
ICC6
CKE VIH(min), CS VIH(min), tcc = tcc(min)
Input signals are changed one time during 2CLK
CKE VIH(min), CLK VIL(max), tcc =
input signals are stable
IOL = 0 mA, Page Burst, All Bank active
Burst Length = 4, CAS Latency = 3
tRC tRC(min), tCC = tcc(min)
CKE 0.2V
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
VERSION
-6
-7
110
100
2
1
20
15
UNIT NOTE
mA
1,2
mA
mA
10
mA
10
30
mA
25
150
140
180
1
mA
mA 1,2
mA
mA
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2004
Revision: 0.1
4/44
 

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