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Part Name
Description
M12L64164A-6TG2Y View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.
Part Name
Description
Manufacturer
M12L64164A-6TG2Y
1M x 16 Bit x 4 Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.
M12L64164A-6TG2Y Datasheet PDF : 45 Pages
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ESMT
M12L64164A
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A2
A1
A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Sequential
Interleave
0123456701234567
1234567010325476
2345670123016745
3456701232107654
4567012345670123
5670123454761032
6701234567452301
7012345676543210
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May 2009
Revision
:
3.4
9/45
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