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NX25F011A View Datasheet(PDF) - NexFlash -> Winbond Electronics

Part Name
Description
Manufacturer
NX25F011A Datasheet PDF : 26 Pages
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NX25F011A
NX25F041A
Write to Sector
Before writing to a sector in the Flash memory array, all
hardware and software write protection must be in an
enabled state. This means that the WP pin must be in a
high state, a Write Enable command must have previ-
ously been issued, and the sector location that is to be
written to must be outside the write protect range set in
the configuration register. Additionally, the Ready/Busy
status should be checked to confirm that the memory
array is available to be written to.
The bit order within each byte is most significant bit first
1 (i.e., D7,...D0). The byte-address is automatically incre-
mented to the next higher byte address as the clock
continues. When the last byte address to be written is
reached, the command can be completed with an
additional eight control clocks (with data=0) followed by
2 asserting CS high. If the clock continues to increment
past the highest byte-address (107H), the address
counter will roll over to byte 0H.
Writing to a sector is accomplished by first bringing CS
low and shifting in the Write to Sector command (F3H)
followed by a 16-bit sector-addressfield. Although the
sector-address field is 16-bits, only bits S[8:0] for the
NX25F011A (0-1FFH) and S[10:0] for the NX25F041A
(0-7FFH) are used. The uppermost sector address bits
are not used but must be clocked in (use 0 data).
Following the sector address, a 16-bit byte-address
field is clocked into the device to designate the starting
location within the 264-byte sector. Only bits B[8:0] of the
byte-address field are used and only values of 0-107H
(264 bytes)are valid.
After the byte-address has been loaded, data is shifted
into the 264-byte SRAM, which serves as a temporary
storage buffer. Existing data in the SRAM will be written
over. The byte order of the data shifted into the SRAM
is least significant byte first (i.e., byte-00H, byte-01H,...).
3 After the CS pin is brought high, the data in the SRAM is
automatically transferred to the Program Buffer, which
handles the self-timed programming of the specified
sector in memory array. See tWP timing specifications.
4 During this time the array will be busyand will ignore
further array-related commands until complete. All
Ready/Busy status indicators will indicate a busy status.
Since the Program Buffer handles all array program-
ming, the SRAM is still available to be read from or
5 written to during the busy state. This allows the SRAM to
be written to in preparation of the next sector write. Once
the SRAM is loaded, its contents can be transferred to a
selected sector using the Transfer SRAM to Sector
6 command. Note that if the write operation is to be verified
the contents of the SRAM should be maintained. Detailed
clock timing for the Write to Sector command is shown
in Figure 11.
Write to
Sector
Command
Sector
Address*
Byte
Address**
Write Sector Data
Program
7
8 Clocks
Time
SI
F3H
SO
S[15:0]
B[15:0]
First Byte - Last Byte
00H
(tWP)
8
*The sector address only uses bits [8:0] or [10:0]
**The byte address only uses bits [8:0]
9
Transfer SRAM to Sector
The Transfer SRAM to Sector command (F3H) will write
the existing contents of the SRAM to the specified
sector in memory. The command sequence is identical
to that of the Write to Sector command except that
immediately after the sector address field S[15:0] and
16 control clocks, the CS pin is asserted high. This
automatically transfers the 264-bytes of SRAM data to the
Program Buffer, which handles the programming of the
specified sector in the memory array. During this time, the
array will be busy. Since the entire 264-bytes are trans-
ferred, the byte-address field B[15:0] is not used.
Transfer SRAM
to Sector
Sector
Command Address*
SI
F3H
S[15:0]
16 Clocks
0000H
10
Program Time
(tWP)
11
SO
*The sector address only uses bits [8:0] or [10:0]
12
NexFlash Technologies, Inc.
13
PRELIMINARY NXSF014B-0699
06/11/99
 

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