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BLC6G20LS-140 View Datasheet(PDF) - Analog Devices

Part Name
Description
Manufacturer
BLC6G20LS-140
ADI
Analog Devices ADI
BLC6G20LS-140 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL(AV)
Gp
ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 1930 to 1990 28 35.5
16.5 31
37 [1]
ACPR
(dBc)
40 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 1000 mA:
x Average output power = 35.5 W
x Power gain = 16.5 dB (typ)
x Efficiency = 31 %
x IMD3 = 37 dBc
x ACPR = 40 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use
 

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