2SA1012Y View Datasheet(PDF) - Bruckewell Technology LTD
Part Name
Description
Manufacturer
2SA1012Y Datasheet PDF : 5 Pages
| |||
2SA1012
Plastic-Encapsulate Transistors (PNP)
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
MIN
V(BR)CBO Collector-base breakdown voltage
IC = -0.1mA , IE = 0
-60
V(BR)CEO* Collector-emitter breakdown voltage IC = -10mA , IB = 0
-50
V(BR)EBO Emitter-base breakdown voltage
IE = -10μA , IC = 0
-5
ICBO
Collector cut-off current
VCB = -50 V , IE = 0
IEBO
Emitter cut-off current
VEB = -5 V , IC = 0
hFE(1)
hFE(2)*
DC current gain
VCE = -1 V , IC = -1 A
70
VCE = -1 V , IC = -3 A
30
VCE(sat)* Collector-emitter saturation voltage IC = -3 A , IB = -150mA
VBE(sat)* Base-emitter saturation voltage
IC = -3 A , IB = -150mA
fT
Transition frequency
VCE = -4 V , IC = -1 A
Cob
Collector output capacitance
VCB = -10 V , IE = 0
f = 1.0MHz
ton
Turn-on Time
ts
Storage time
tf
Fall time
VCC = -30 V, IC = -3 A
IB1 = -IB2 = -0.15 A
*Pulse test: tp≤300μs, δ≤0.02.
CLASSIFICATION of hFE(1)
Rank
Range
O
70-140
TYP MAX UNIT
V
V
V
-1
μA
-1
μA
240
-0.4
V
1.2
V
60
MHz
170
pF
0.1
1.0
μs
0.1
Y
120-240
Publication Order Number: [2SA1012]
© Bruckewell Technology Corporation Rev. A -2014
|
|
Share Link: 