HBN2412S6R View Datasheet(PDF) - Cystech Electonics Corp.

Part Name

Description

Manufacturer

HBN2412S6R

General Purpose NPN Epitaxial Planar Transistors (dual transistors)

Cystech Electonics Corp. 

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistors

(dual transistors)

HBN2412S6R

Spec. No. : C202S6R

Issued Date : 2003.06.11

Revised Date : 2006.01.19

Page No. : 1/5

Features

• Two BTC2412 chips in a SOT-363R package.

• Mounting possible with SOT-323 automatic mounting machines.

• Transistor elements are independent, eliminating interference.

• Mounting cost and area can be cut in half.

• Low Cob. Typ. Cob=2.0pF

• Complementary to HBP1037S6R

• Pb-free package

Equivalent Circuit

HBN2412S6R

Outline

SOT-363R

Tr1

Tr2

The following characteristics apply to both Tr1 and Tr2

Absolute Maximum Ratings (Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

Pd

Tj

Tstg

Limits

Unit

60

V

40

V

6

V

200

mA

200(total) (Note)

mW

150

°C

-55~+150

°C

Note : 150mW per element must not be exceeded.

HBN2412S6R

CYStek Product Specification

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