G5853 View Datasheet(PDF) - Hamamatsu Photonics

Part Name

Description

Manufacturer

G5853

InGaAs PIN photodiodes

Hamamatsu Photonics 

InGaAs PIN photodiodes

G8423/G8373/G5853 series

Terminal capacitance vs. reverse voltage

10 nF

(Typ. Ta=25 °C, f=1 MHz)

G8373-03

G5853-13/-23

1 nF

G8373-01

G5853-11/-21

100 pF

G8423-05

10 pF

0.1

G8423-03

G5853-103/-203

1

10

Reverse voltage (V)

KIRDB0239EA

Thermistor temperature characteristic

106

(Typ.)

105

104

103

-40 -30 -20 -10 0 10 20 30

Element temperature (°C)

KIRDB0116EA

Shunt resistance vs. element temperature

1 MΩ

100 kΩ

(Typ. VR=10 mV)

G8423-03

G5853-103/-203

G8423-05

10 kΩ

G8373-01

G5853-11/-21

1 kΩ

100 Ω

G8373-03

G5853-13/-23

10 Ω

-40 -20 0 20 40 60 80 90 100

Element temperature (°C)

KIRDB0240EA

Cooling characteristics of TE-cooler

(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)

40

20

One-stage

TE-cooled type

0

-20

Two-stage

-40

TE-cooled type

-60

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Current (A)

KIRDB0231EA

3

Share Link: