STP3NA80 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP3NA80

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STP3NA80

STP3NA80FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

ST P 3NA 80

ST P 3NA 80 F I

VDSS

800 V

800 V

R DS( on)

< 4.5 Ω

< 4.5 Ω

ID

3.1 A

2A

s TYPICAL RDS(on) = 3.5 Ω

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW INTRINSIC CAPACITANCES

s GATE GHARGE MINIMIZED

s REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the

most advanced high voltage technology. The

optimized cell layout coupled with a new

proprietary edge termination concur to give the

device low RDS(on) and gate charge, unequalled

ruggedness and superior switching performance.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

P ar amete r

VD S

VDG R

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RG S = 20 kΩ)

VGS

ID

ID

ID M(•)

Ptot

Gate-source Voltage

Drain Current (continuous) at T c = 25 oC

Drain Current (continuous) at T c = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

November 1993

3

2

1

TO-220

3

2

1

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

Val ue

STP3NA80

STP5NA80FI

800

800

± 30

3.1

2

2

1.3

12.5

12.5

100

40

1. 25

0. 32



2000

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

V

oC

oC

1/10

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