STGP10NB37LZ View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGP10NB37LZ Datasheet PDF : 9 Pages
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STGP10NB37LZ
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
1.2
°C/W
62.5
°C/W
0.2
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
BV(CES) Clamped Voltage
IC = 2 mA, VGE = 0,
Tj= - 40°C to 150°C
375
400
425
V
BV(ECR) Emitter Collector Break-down IEC = 75 mA, VGE = 0,
18
V
Voltage
Tj= - 40°C to 150°C
BVGE
Gate Emitter Break-down
Voltage
IG = ± 2 mA
Tj= - 40°C to 150°C
12
16
V
ICES
Collector cut-off Current
(VGE = 0)
VCE = 15 V, VGE =0 ,Tj =150 °C
VCE =200 V, VGE=0 ,TC =150°C
10
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 10V , VCE = 0
± 700 µA
RGE
Gate Emitter Resistance
20
KΩ
ON (1)
Symbol
VGE(th)
Parameter
Gate Threshold Voltage
VCE(SAT) Collector-Emitter Saturation
Voltage
IC
Collector Current
Test Conditions
VCE = VGE, IC = 250µA,
Tj= - 40°C to 150°C
VGE =4.5V, IC = 10 A, Tj= 25°C
VGE =4.5V, IC = 10 A, Tc= -40°C
VGE = 4.5V, VCE = 9 V
Min.
0.6
20
Typ.
1.2
1.3
Max. Unit
2.4
V
1.8
V
V
A
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
Qg
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
Test Conditions
VCE = 15 V , IC =20 A
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 320V, IC = 10 A,
VGE = 5V
Min.
Typ.
18
1250
103
18
28
Max. Unit
S
pF
pF
pF
nC
2/9
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