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DG419LDQ-T1-E3 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
DG419LDQ-T1-E3
Vishay
Vishay Semiconductors Vishay
DG419LDQ-T1-E3 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
DG417L, DG418L, DG419L
Vishay Siliconix
TEST CIRCUITS
VL
C
Rg = 50 Ω
0 V, 2.4 V
NO or NC
IN
GND
V+
C
COM
V-
C
RL
50 Ω
V-
Off Isolation = 20 log
C = RF Bypass
VCOM
VNO/NC
Figure 7. Off Isolation
VL
C
VL
V+
C
V+
COM
IN
0 V, 2.4 V
GND
NO or NC
V-
C
Meter
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
V-
Figure 8. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?71763.
www.vishay.com
Document Number: 71763
10
S11-0598-Rev. F, 25-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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