SF307S View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
Manufacturer
SF307S
Thinki Semiconductor Co., Ltd.
SF307S Datasheet PDF : 2 Pages
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SF304S thru SF307S
®
SF304S/SF306S/SF307S
Pb
Pb Free Plating Product
30 Ampere Dual Series Connection Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS,Adapter and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: TO-247AD/TO-3P heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 5.6 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit : inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C"
Suffix "A"
Suffix "D"
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL SF304S
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 15.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
SF306S
400
280
400
30.0
300
1.3
10
500
35-50
150
-55 to +150
SF307S UNIT
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
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