APT5010JVRU3 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APT5010JVRU3 Datasheet PDF : 7 Pages
| |||
APT5010JVRU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 22A
VGS = VDS, ID = 2.5mA
2
VGS = ±20 V, VDS = 0V
25 µA
250
100 mΩ
4V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 250V
ID = 44A @ TJ=25°C
VGS = 15V
VBus = 250V
ID = 44A @ TJ=25°C
RG = 0.6Ω
Min Typ Max Unit
7410
1050
pF
390
312
37
nC
127
18
16
ns
54
5
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
Tj = 125°C
IRM Maximum Reverse Leakage Current
VR = 600V
VR = 600V
Tj = 25°C
Tj = 125°C
CT Junction Capacitance
VR = 200V
Reverse Recovery Time
trr
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/µs
Tj = 25°C
Tj = 25°C
Tj = 125°C
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Qrr Reverse Recovery Charge
Tj = 25°C
Tj = 125°C
1.6 1.8
1.9
V
1.4
250
500
µA
44
pF
23
85
ns
160
4
A
8
130
nC
700
trr Reverse Recovery Time
IF = 30A
70
ns
Qrr Reverse Recovery Charge
VR = 400V
Tj = 125°C
1300
nC
IRRM Maximum Reverse Recovery Current di/dt =1000A/µs
30
A
www.microsemi.com
2–7
|
|
Share Link: 