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EM636165-XXI View Datasheet(PDF) - Etron Technology

Part NameEM636165-XXI Etron
Etron Technology Etron
Description1Mega x 16 Synchronous DRAM (SDRAM)
EM636165-XXI Datasheet PDF : 73 Pages
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EtronTech
1M x 16 SDRAM EM636165-XXI
LDQM,
UDQM
Input
Data Input/Output Mask: LDQM and UDQM are byte specific, nonpersistent
I/O buffer controls. The I/O buffers are placed in a high-z state when
LDQM/UDQM is sampled HIGH. Input data is masked when LDQM/UDQM is
sampled HIGH during a write cycle. Output data is masked (two-clock latency)
when LDQM/UDQM is sampled HIGH during a read cycle. UDQM masks DQ15-
DQ8, and LDQM masks DQ7-DQ0.
DQ0-DQ15 Input/Output Data I/O: The DQ0-15 input and output data are synchronized with the positive
edges of CLK. The I/Os are byte-maskable during Reads and Writes.
NC
-
No Connect: These pins should be left unconnected.
VDDQ
Supply DQ Power: Provide isolated power to DQs for improved noise immunity.
( 3.3V± 0.3V )
VSSQ
Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity.
(0V)
VDD
Supply Power Supply: +3.3V ± 0.3V
VSS
Supply Ground
Preliminary
4
Rev. 1.1 Apr. 2005
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