EtronTech
1M x 16 SDRAM EM636165-XXI
Recommended D.C. Operating Conditions (VDD = 3.3V ± 0.3V)
Industrial Operating temperature : Ta = -40~85°C
Description/Test condition
Operating Current
1 bank
tRC ≥ tRC(min), Outputs Open, Input operation
signal one transition per one cycle
Precharge Standby Current in non-power down mode
tCK = tCK(min), CS# ≥ VIH, CKE = VIH
Input signals are changed once during 30ns.
Precharge Standby Current in power down mode
tCK = tCK(min), CKE ≤ VIL(max)
Symbol
IDD1
IDD2N
IDD2P
-6I(G)/7I(G)/8I(G)/10I(G)
Max.
115/100/95/85
90/85/75/60
2
Precharge Standby Current in power down mode
tCK = ∞,CKE ≤ VIL(max)
Active Standby Current in power down mode
CKE ≤ VIL(max), tCK = tCK(min)
Active Standby Current in non-power down mode
CKE ≥ VIL(max), tCK = tCK(min)
Operating Current (Burst mode)
tCK=tCK(min), Outputs Open, Multi-bank interleave,gapless
data
Refresh Current
tRC ≥ tRC(min)
Self Refresh Current
VIH ≥ VDD - 0.2, 0V ≤ VIL ≤ 0.2V
IDD2PS
IDD3P
IDD3N
IDD4
IDD5
IDD6
2
2
90/80/70/55
150/140/130/115
100/90/90/80
2
Unit Note
3
3
3
mA
3
3, 4
3
Parameter
IIL
IOL
VOH
VOL
Description
Input Leakage Current
( 0V ≤ VIN ≤ VDD, All other pins not under test = 0V )
Output Leakage Current
Output disable, 0V ≤ VOUT ≤ VDDQ)
LVTTL Output "H" Level Voltage
( IOUT = -2mA )
LVTTL Output "L" Level Voltage
( IOUT = 2mA )
Min.
- 10
- 10
2.4
-
Max.
10
Unit Note
µA
10
µA
-
V
0.4
V
Preliminary
18
Rev. 1.1 Apr. 2005