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EM636165BE-10G View Datasheet(PDF) - Etron Technology

Part NameEM636165BE-10G Etron
Etron Technology Etron
Description1Mega x 16 Synchronous DRAM (SDRAM)
EM636165BE-10G Datasheet PDF : 75 Pages
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EtronTech
CLK
DQM
T0
T1
T2
1M x 16 SDRAM
T3
T4
T5
1 Clk Interval
EM636165
T6
T7
T8
C OM M A ND
NOP
NOP
BANKA
ACTIVATE
NOP
READ A WRITE A
NOP
NOP
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
: "H" or "L"
Must be Hi-Z before
the Write Command
DIN A0
DIN A0
DIN A1
DIN A1
DIN A2
DIN A2
Read to Write Interval (Burst Length 4, CAS# Latency = 1, 2)
NOP
DIN A3
DIN A3
CLK
DQM
T0
T1
T2
T3
T4
T5
T6
T7
T8
C OM M A ND
NOP
NOP
READ A
NOP
NOP
WRITE B
NOP
NOP
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
: "H" or "L"
DOUT A0
DIN B0
Must be Hi-Z before
the Write Command
DIN B0
DIN B1
DIN B1
DIN B2
DIN B2
Read to Write Interval (Burst Length 4, CAS# Latency = 1, 2)
NOP
DIN B3
DIN B3
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank. The following figure shows the optimum time that
BankPrecharge/ PrechargeAll command is issued in different CAS# latency.
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
ADDRESS
COMMAND
Bank,
Col A
READ A
NOP
NOP
NOP
Bank(s)
Precharge
tRP
NOP
NOP
Bank,
Row
Activate
NOP
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DOUT A0
DOUT A1 DOUT A2
DOUT A3
DOUT A0
DOUT A1 DOUT A2
DOUT A3
DOUT A0
DOUT A1 DOUT A2
DOUT A3
Preliminary
Read to Precharge (CAS# Latency = 1, 2, 3)
9
Rev. 2.7 Mar. 2006
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