EM636165TS-7LG View Datasheet(PDF) - Etron Technology

Part Name

Description

Manufacturer

EM636165TS-7LG

1Mega x 16 Synchronous DRAM (SDRAM)

Etron Technology 

EtronTech

1M x 16 SDRAM

EM636165

Recommended D.C. Operating Conditions (VDD = 3.3V ± 0.3V, Ta = 0~70°C)

Description/Test condition

Operating Current

1 bank

tRC ≥ tRC(min), Outputs Open, Input operation

signal one transition per one cycle

Precharge Standby Current in non-power down mode

tCK = tCK(min), CS# ≥ VIH, CKE = VIH

Input signals are changed once during 30ns.

Precharge Standby Current in power down mode

tCK = tCK(min), CKE ≤ VIL(max)

Symbol

- 5/55/6/7/8/10

Max.

130/125/115/100/95/85

IDD1

IDD2N

IDD2P

115/110/90/85/75/60

2

- 7L

Unit

40

15

0.8

Note

3

3

3

Precharge Standby Current in power down mode

tCK = ∞,CKE ≤ VIL(max)

IDD2PS

2

0.8

mA

Active Standby Current in power down mode

CKE ≤ VIL(max), tCK = tCK(min)

IDD3P

2

1.5

3

Active Standby Current in non-power down mode

CKE ≥ VIL(max), tCK = tCK(min)

IDD3N

105/100/90/80/70/55

20

Operating Current (Burst mode)

tCK=tCK(min), Outputs Open, Multi-bank interleave,gapless

IDD4

165/160/150/140/130/115 40

3, 4

data

Refresh Current

tRC ≥ tRC(min)

IDD5

115/110/100/90/90 /80 40

3

Self Refresh Current

VIH ≥ VDD - 0.2, 0V ≤ VIL ≤ 0.2V

IDD6

2

0.6

Parameter

IIL

IOL

VOH

VOL

Description

Input Leakage Current

( 0V ≤ VIN ≤ VDD, All other pins not under test = 0V )

Output Leakage Current

Output disable, 0V ≤ VOUT ≤ VDDQ)

LVTTL Output "H" Level Voltage

( IOUT = -2mA )

LVTTL Output "L" Level Voltage

( IOUT = 2mA )

Min.

- 10

- 10

2.4

－

Max.

10

Unit Note

µA

10

µA

－

V

0.4

V

Preliminary

19

Rev. 2.7 Mar. 2006

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